2SJ186 Datasheet PDF - Hitachi Semiconductor
| Part Number | 2SJ186 | |
| Description | Silicon P-Channel MOS FET | |
| Manufacturers | Hitachi Semiconductor | |
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There is a preview and 2SJ186 download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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2SJ186
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
|
| |
 
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–20
Pulse Test
–16
–12
–1 A
–8
–0.5 A
–4
ID = –0.2 A
0 –4 –8 –12 –16 –20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Case Temperature
24
Pulse Test
VGS = –10 V
20
–1 A
–0.5 A
16
12
ID = –0.2 A
8
4
–40
0 40 80 120
Case Temperature TC (°C)
160
2SJ186
Static Drain to Source on State
Resistance vs. Drain Current
100
Pulse Test
50
20
10 VGS = –10 V
–15 V
5
2
1
–0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
1.0
Pulse Test
0.5 VDS = –20 V TC = –25°C
0.2 25°C
75°C
0.1
0.05
0.02
0.01
–0.01–0.02 –0.05 –0.1 –0.2 –0.5 –0.1
Drain Current ID (A)
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SJ186 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 2SJ186.PDF Datasheet ] | |
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