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Datasheet 2SD874A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2SD874A | NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD874A
2SD874A TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
1A
OV(BR)CBO:
60 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
IC | WEJ | transistor |
2 | 2SD874A | Silicon NPN Epitaxial Planar Type Transistors SMD Type
Transistors
Silicon NPN Epitaxial Planar Type 2SD874,2SD874A
Features
Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat). Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine p | Kexin | transistor |
3 | 2SD874A | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SD874A
1A , 60V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A
CLASSIFICAT | SeCoS | transistor |
4 | 2SD874A | NPN Transistor 2SD874A
TRANSISTOR (NPN)
FEATURES
z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) z Complementary to 2SB766A
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Vo | Jin Yu Semiconductor | transistor |
5 | 2SD874A | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* | Panasonic Semiconductor | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V Panasonic Semiconductor transistor | | |
2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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