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What is 1N277?

This electronic component, produced by the manufacturer "Microsemi Corporation", performs the same function as "Optimized for Radio Frequency Response".


1N277 Datasheet PDF - Microsemi Corporation

Part Number 1N277
Description Optimized for Radio Frequency Response
Manufacturers Microsemi Corporation 
Logo Microsemi Corporation Logo 


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Gold Bonded
1N277 Germanium Diodes
Optimized for Radio Frequency Response
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.
Applications
AM/FM detectors
Ratio detectors
DO-7 Glass Package
FM discriminators
TV audio detectors
0.018-0.022"
0.458-.558 mm
RF input probes
TV video detectors
Features
1.0"
25.4 mm
(Min.)
Lower leakage current
Flat junction capacitance
High mechanical strength
At least 1 million hours MTBF
BKC's Sigma-Bond™ plating for
problem free solderability
Absolute Maximum Ratings at T = 25 OC
amb
Parameter
Peak Inverse Voltage
Breakdown Voltage @ I = 1.0 mA
R
Surge Current , t = 1 Second
Peak Operating Current
Average Rectified Forward Current
Operating and Storage Temperatures
Electrical Characteristics at T = 25 OC
amb
Parameter
Test Conditions
Forward Voltage Drop IF = 100 mA
Length
0.230-0.30"
5.85-7.62mm
Dia
0.085-.107 "
2.16-2.71 mm
Symbols
PIV
V
BR
IFSM
IOS
I
O
T
J & STG
Symbols
VF
Min.
**
110
-65
Max.
110
0.5
270
75
+90
Units
Volts
Volts
Amps
mA
mA
OC
Min.
Typ.
Max. Units
1.00 Volts
Reverse Leakage
V = 10 Volts,T = 75 OC
R amb
Reverse Leakage
V = 50 Volts,T = 75 OC
R amb
Breakdown Voltage @ IR = 1.0 mA
I **
R
I **
R
PIV 110
75 µA
250 µA
Volts
Junction Capacitance f = 1MHz, VR = 0 volt
CJ 0.8 pF
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 1N277 electronic component.


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