(PDF) 1888-03 Datasheet - RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

Número de pieza	1888-03
Descripción	RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
Fabricantes	STMicroelectronics
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No Preview Available ! SD1888-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS .......1.65 GHz 28 VOLTS EFFICIENCY 50% MIN. CLASS C OPERATION COMMON BASE INPUT/OUTPUT MATCHING POUT = 24 W MIN. WITH 9.0 dB GAIN .250 x .320 2LFL (M170) epoxy sealed ORDER CODE SD1888-03 B RA ND IN G 1888-3 PIN CONNECTION DESCRIPTION The SD1888-03 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emit- ter-ballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating conditions. SD1888-03 is packaged in a cost-ef- fective epoxy sealed housing ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symb ol Parameter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance July 1993 1. Collector 2. Emitter 3. Base Value 45 12 3.0 2.6 50 +200 − 65 to +150 Unit V V V A W °C °C 3.5 °C/W 1/4 1 page

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PDF 1888-03 Data sheet ( Hoja de datos )