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PDF 1N4454UR-1 Data sheet ( Hoja de datos )

Número de pieza 1N4454UR-1
Descripción MINI-MELF-SMD Silicon Swithching Diode
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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MINI-MELF-SMD 1N4454UR-1
Applications
Silicon Switching Diode
Used in general purpose applications,
where performance, space and
switching speed are important.
Features
LL-34/35 MINI MELF
Surface Mount Package DO-213AA
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
0.10"REF
2.54 mmREF
Both End Caps
0.016-.022"
0.41-0.55 mm
for problem free solderability
Also comes in DO-35 glass package
Length
0.13-0.146"
3.30-3.70 mm
Full UR approval to Mil-S-19500 /144
Available up to JANTXV levels
"S" level screening available to Source Control Drawings
Dia.
.063-.067"
1.6-1.7mm
Maximum Ratings
Symbol
Value
Unit
Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC
PIV
75 (Min.)
Volts
Average Rectified Current
Continuous Forward Current
Peak Surge Current (tpeak = 1 sec.)
Power Dissipation TL= 50 oC, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics @ 25 oC*
IAvg
IFdc
Ipeak
Ptot
TOp
TSt
Symbol
200
300
1.0
500
200
-65 to +200
Limits
mAmps
mAmps
Amp
mWatts
oC
oC
Unit
Forward Voltage @ IF= 10 mA
Breakdown Voltage @ IR = 10 mA
Reverse Leakage Current @ VR = 50 V
Reverse Leakage Current @ VR = 50 V, T=150 o C
Capacitance @ VR = 0 V, f = 1mHz
Reverse Recovery Time (note 1)/(note 2)
Forward Recovery Voltage (note 3)
VF
PIV
IR
IR
CT
trr
Vfr
1.0(max)
75 (min)
0.1 (max)
100 (max)
2.0 (max)
2.0/4.0 (max)
3.0 (max)
Volts
Volts
µA
µA
pF
nSecs
Volts
Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf.
Note 2: Per Method 4031-A with IF = 10 mA, RL = 100 Ohms, Vr = 6 V, Recover to 1.0 mA.
Note 3: Per Method 4026 with I = 100 mA, R = 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe-
FL
tition Rate = 5 - 100 KHz. *Unless Otherwise Specified
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135

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