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What is 1N4448?

This electronic component, produced by the manufacturer "Diodes Incorporated", performs the same function as "150mA, 100V, FAST SWITCHING DIODE".


1N4448 Datasheet PDF - Diodes Incorporated

Part Number 1N4448
Description 150mA, 100V, FAST SWITCHING DIODE
Manufacturers Diodes Incorporated 
Logo Diodes Incorporated Logo 

The 1N4448 is a small signal fast switching diode.

Features:

1. Fast Switching Speed
2. General Purpose Rectification
3. Silicon Epitaxial Planar Construction

Advantages:

1. Its small size and low forward voltage drop make it suitable for use in a wide range of applications, including power supplies, signal processing, and RF circuits.
2. The diode has a fast switching speed, making it ideal for applications that require fast response times.

Disadvantages:

1. The 1N4448 has a relatively low maximum reverse voltage rating of 100 V, which may not be sufficient for some applications.
2. The diode has a relatively low maximum forward current rating of 150 mA, which may not be suitable for high power applications.
3. The diode can experience thermal runaway if operated at high current levels or with insufficient heat sinking.


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Features
Fast Switching Speed
General Purpose Rectification
Silicon Epitaxial Planar Construction
Lead Free Finish, RoHS Compliant (Note 2)
1N4148 / 1N4448
FAST SWITCHING DIODE
Mechanical Data
Case: DO-35
Case Material: Glass
Moisture Sensitivity: Level 1 per J-STD-020D
Leads: Solderable per MIL-STD-202, Method 208
Terminals: Finish Sn96.5Ag3.5. Solderable per MIL-STD-
202, Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 2
Weight: 0.13 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
@ t = 1.0s
@ t = 1.0μs
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
1N4148
1N4448
100
75
53
300 500
150
1.0
2.0
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Derate Above 25°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ , TSTG
Value
500
1.68
300
-65 to +175
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Total Capacitance
Reverse Recovery Time
1N4148
1N4448
1N4448
Symbol
VFM
IRM
CT
trr
Min
0.62
Max
1.0
0.72
1.0
5.0
50
30
25
4.0
4.0
Unit
V
μA
μA
μA
nA
pF
ns
Test Condition
IF = 10mA
IF = 5.0mA
IF = 100mA
VR = 75V
VR = 70V, TJ = 150°C
VR = 20V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = 10mA to IR =1.0mA
VR = 6.0V, RL = 100Ω
Notes:
1. Valid provided that device terminals are kept at ambient temperature.
2. EC Directive 2002/95/EC (RoHS) revision 13.2.2003. Glass and high temperature solder exemptions applied where applicable,
see EU Directive Annex Notes 5 and 7.
1N4148 / 1N4448
Document number: DS12019 Rev. 7 - 2
1 of 2
www.diodes.com
March 2008
© Diodes Incorporated


Part Details

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1N4448 datasheet


1. - Vrrm=75V, Fast Switching Diode

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