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Número de pieza | 1N4150 | |
Descripción | Small Signal Diodes | |
Fabricantes | General Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1N4150 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! 1N4150
Small Signal Diodes
DO-35
max. ∅.079 (2.0)
Cathode
Mark
FEATURES
♦ Silicon Epitaxial Planar Diode
♦ For general purpose and switch-
ing.
♦ This diode is also available in other
case styles including: the SOD-123 case
with the type designation 1N4150W and the
MiniMELF case with the type designation
LL4150.
max. ∅.020 (0.52)
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Peak Reverse Voltage
Maximum Average Rectified Current
Maximum Power Dissipation at Tamb = 25 °C
Maximum Junction Temperature
Maximum Forward Voltage Drop at IF = 200 mA
Maximum Reverse Current at VR = 50 V
Max. Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF
Symbol
VRM
I0
Ptot
Tj
VF
IR
trr
Value
50
200
500
200
1.0
100
4.0
Unit
V
mA
mW
°C
V
nA
ns
4/98
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet 1N4150.PDF ] |
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