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Número de pieza | 1N400X | |
Descripción | 1.0A RECTIFIER | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1N400X (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! POWER SEMICONDUCTOR
Features
• Diffused Junction
• High Current Capability and Low Forward
Voltage Drop
• Surge Overload Rating to 30A Peak
• Low Reverse Leakage Current
• Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
• Case: Molded Plastic
• Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
• Polarity: Cathode Band
• Weight: DO-41 0.30 grams (approx)
A-405 0.20 grams (approx)
• Mounting Position: Any
• Marking: Type Number
1N4001/L - 1N4007/L
1.0A RECTIFIER
ABA
C
D
DO-41 Plastic
A-405
Dim Min Max Min Max
A 25.40 25.40
B 4.06 5.21 4.10 5.20
C 0.71 0.864 0.53 0.64
D 2.00 2.72 2.00 2.70
All Dimensions in mm
“L” Suffix Designates A-405 Package
No Suffix Designates DO-41 Package
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TA = 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@ IF = 1.0A
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@ TA = 25°C
@ TA = 100°C
Typical Thermal Resistance Junction to Ambient
Maximum DC Blocking Voltage Temperature
Operating and Storage Temperature Range (Note 3)
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RθJA
TA
Tj, TSTG
1N
4001/L
50
35
1N 1N 1N 1N
4002/L 4003/L 4004/L 4005/L
100 200 400 600
70 140 280 420
1.0
30
1.0
5.0
50
15
100
+150
-65 to +175
1N
4006/L
800
560
8
1N
4007/L
1000
700
Unit
V
V
A
A
V
µA
pF
K/W
°C
°C
Notes:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1. MHz and applied reverse voltage of 4.0V DC.
3. JEDEC Value
DS28002 Rev. E-2
1 of 2
1N4001/L-1N4007/L
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 1N400X.PDF ] |
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