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PDF 1N4006 Data sheet ( Hoja de datos )
| Número de pieza | 1N4006 | |
| Descripción | 1.0 AMP, 800V, SILICON RECTIFIER | |
| Fabricantes | Bytes | |
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1N4001 THRU 1N4007
1.0 AMP SILICON RECTIFIERS
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance RθJA (Note 2)
Operating and Storage Temperature Range TJ, TSTG
1N4001
50
35
50
1N4002 1N4003 1N4004
100 200 400
70 140 280
100 200 400
1N4005 1N4006 1N4007 UNITS
600 800 1000 V
420 560
700 V
600 800 1000 V
1.0 A
30
1.0
5.0
50
15
50
-65 +150
A
V
µA
µA
pF
C/W
C
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
112
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N4006.PDF ] | |
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