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PDF BCW30LT1 Data sheet ( Hoja de datos )

Número de pieza BCW30LT1
Descripción General Purpose Transistors(PNP Silicon)
Fabricantes ON Semiconductor　
Logotipo ON Semiconductor Logotipo



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BCW30LT1
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Symbol
Total Device Dissipation
FR-5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
PD
RθJA
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, Tstg
 (1) FR– 5 = 1.0 0.75 0.062 in.
 (2) Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Value
–32
–32
–5.0
–100
Value
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT–23 (TO–236AB)
CASE 318
STYLE 6
DEVICE MARKING
C2x
x = Monthly Date Code
ORDERING INFORMATION
Device
Package
Shipping
BCW30LT1
SOT–23
3000 Units/Rail
© Semiconductor Components Industries, LLC, 1999
November, 1999 – Rev. 0
1
Publication Order Number:
BCW30LT1/D

1 page




BCW30LT1 pdf
BCW30LT1
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
TYPICAL DYNAMIC CHARACTERISTICS
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
1000
700
500
300
200
VCC = – 3.0 V
IC/IB = 10
ts
IB1 = IB2
TJ = 25°C
td @ VBE(off) = 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn–On Time
50 70 100
100
70
50
tf
30
20
10
–1.0
– 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 – 50 – 70 –100
IC, COLLECTOR CURRENT (mA)
Figure 12. Turn–Off Time
500
TJ = 25°C
300 VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 13. Current–Gain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0 Cob
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance
20
50
20
VCE = –10 Vdc
10 f = 1.0 kHz
7.0
hfe ≈ 300
TA = 25°C
5.0 @ IC = –1.0 mA
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50
30
hfe ≈ 300
@ IC = 1.0 mA
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
50 100
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