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Datasheet BFC60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BFC60 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS LAB
TO220–AC Package Outline.
Dimensions in mm (inches)
10.67 (0.420) 9.65 (0.380)
SEME
BFC60
2
16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.84 (0.230)
5.33 (0.210) 4.83 (0.190) 1.40 (0.020) 0.51 (0.055) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia.
4.83 (0.190) 3.56 (0.140)
N–CHA | Seme LAB | mosfet |
BFC Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BFC40 | NCHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 3.55 (0.140) 3.81 (0.150)
SEME
BFC40
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS VDSS ID(cont) RDS(on) 1500V 2A 8.00W
4. Seme LAB mosfet | | |
2 | BFC43 | 4TH GENERATION MOSFET LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640)
SEME
BFC43
4TH GENERATION MOSFET
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
20.80 (0.819) 21.46 (0.845)
3.55 (0.140) 3.81 (0.15 Seme LAB mosfet | | |
3 | BFC43 | 4TH GENERATION MOSFET LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640)
SEME
BFC43
4TH GENERATION MOSFET
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
20.80 (0.819) 21.46 (0.845)
3.55 (0.140) 3.81 (0.15 Seme LAB mosfet | | |
4 | BFC505 | NPN wideband cascode transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFC505 NPN wideband cascode transistor
Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 1996 Oct 08
Philips Semiconductors
Product specification
NPN wideband cascode transistor
FEATURES • Small size • High pow NXP Semiconductors transistor | | |
5 | BFC51 | 4TH GENERATION MOSFET LAB
TO247–AD Package Outline.
Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640)
SEME
BFC51
4TH GENERATION MOSFET
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
20.80 (0.819) 21.46 (0.845)
3.55 (0.140) 3.81 (0.15 Seme LAB mosfet | | |
6 | BFC520 | NPN wideband cascode transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BFC520 NPN wideband cascode transistor
Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10
Philips Semiconductors
Product specification
NPN wideband cascode transistor
FEATURES • Small size • High pow NXP Semiconductors transistor | | |
7 | BFC60 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS LAB
TO220–AC Package Outline.
Dimensions in mm (inches)
10.67 (0.420) 9.65 (0.380)
SEME
BFC60
2
16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.84 (0.230)
5.33 (0.210) 4.83 (0.190) 1.40 (0.020) 0.51 (0.055) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia.
4.83 (0.190) 3.56 (0.140)
N–CHA Seme LAB mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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