|
|
Datasheet BF259 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BF259 | HIGH VOLTAGE TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Derate above 25°C
Operating and Storage Junctio |  Motorola Semiconductors | transistor |
| 2 | BF259 | NPN SILICON HIGH VOLTAGE TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON HIGH VOLTAGE TRANSISTORS
BF257, BF 258, BF259
TO-39 Metal Can Package
INTENDED FOR VIDEO OUTPUT STAGES IN BLACK AND WHITE AND IN COLOUR TELEVISION REVEIVERS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC u |  CDIL | transistor |
| 3 | BF259 | Bipolar NPN Device BF259
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (TO |  Seme LAB | data |
| 4 | BF259 | High Voltage Power Transistors High Voltage Power Transistor
Pin Configuration 1. Emitter 2. Base 3. Collector
Features:
• Devices with breakdown voltages of 160V minimum • NPN Silicon High Voltage Power Transistors
Absolute Maximum Ratings:
(Ta = 25°C unless otherwise specified) Characteristic
Collector Base Volta |  Multicomp | transistor |
| 5 | BF259 | HIGH VOLTAGE VIDEO AMPLIFIERS BF257 BF258-BF259
HIGH VOLTAGE VIDEO AMPLIFIERS
DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for videooutput stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection |  STMicroelectronics | amplifier |
BF2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BF20-601A | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | BF200 | NPN TRANZYSTORY ETC data | | |
| 3 | BF2000 | Silicon N Channel MOSFET Tetrode BF 2000
Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz
3 4 2 1
VPS05178
Type BF 2000
Marking Ordering Code NDs Q62702-F1771
Pin Configuration 1=S 2=D 3 = G2 4 = G1
Package S  Siemens Semiconductor Group mosfet | | |
| 4 | BF2000W | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) BF 2000W
Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz
3 4
2 1
VPS05605
Type
Marking Ordering Code Q62702-F1772
Pin Configuration 1=D 2=S 3 = G1 4 = G2
Package SOT-343
BF Siemens Semiconductor Group mosfet | | |
| 5 | BF200B | NPN High Frequency Transistors Bharat transistor | | |
| 6 | BF200B | IF / RF Amplifiers and Oscillators Advani amplifier | | |
| 7 | BF2030 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) BF 2030
Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BF 2030
Marking Ordering Code NEs Q62702-F1773
Pin Siemens Semiconductor Group mosfet | |
| Esta página es del resultado de búsqueda del BF259. Si pulsa el resultado de búsqueda de BF259 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |