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Número de pieza | BLF522 | |
Descripción | UHF power MOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLF522 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BLF522
UHF power MOS transistor
Product specification
September 1992
1 page Philips Semiconductors
UHF power MOS transistor
Product specification
BLF522
handbook, h5alfpage
RDSon
(Ω)
4
MRA253
3
2
1
0
0 50 100 Tj (oC) 150
ID = 0.7 A; VGS = 15 V;
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
handbook, 5h0alfpage
C
(pF)
40
MRA246
30
Cos
20
Cis
10
0 0 4 8 12 16
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
handbook, 1h0alfpage
Crs
(pF)
8
MRA256
6
4
2
0
0 4 8 12 16
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
5 Page Philips Semiconductors
UHF power MOS transistor
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 6 leads
Product specification
BLF522
SOT171A
A
H U2
A
D
D1
U1
q
H1
b1
2 46
1 35
b
e
F
C
w2 M C
B
c
E1
p
w3 M
w1 M A B
Q
E
0 5 10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT A b b1 c D D1 E E1 e F H H1 p Q q U1 U2 w1 w2 w3
mm
6.81
6.07
2.15
1.85
3.20
2.89
0.16
0.07
9.25
9.04
9.30
8.99
5.95
5.74
6.00
5.70
3.58
3.05 11.31 9.27
2.54 10.54 9.01
3.43
3.17
4.32
4.11
18.42
24.90
24.63
6.00
5.70
0.51
1.02
0.26
inches
0.268
0.239
0.085
0.073
0.126
0.114
0.006
0.003
0.364
0.356
0.366
0.354
0.234
0.226
0.236
0.224
0.140
0.120
0.100
0.445
0.415
0.365
0.355
0.135
0.125
0.170
0.162
0.725
0.980
0.970
0.236
0.224
0.02
0.04
0.01
OUTLINE
VERSION
SOT171A
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
September 1992
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet BLF522.PDF ] |
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