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PDF BUZ272 Data sheet ( Hoja de datos )
| Número de pieza | BUZ272 | |
| Descripción | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ272 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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BUZ 271
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 271
VDS
-50 V
ID
-22 A
RDS(on)
0.15 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = -22 A, VDD = -25 V, RGS = 25 Ω
L = 413 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1453-A2
Values
-22
Unit
A
-88
mJ
200
± 20
125
-55 ... + 150
-55 ... + 150
≤1
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
1 page  
BUZ 271
Power dissipation
Ptot = ƒ(TC)
130
W
110
Ptot 100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
-10 3
A
I
D
-10 2
-10 1
/ID
= V DS
R DS(on)
tp = 35.0µs
100 µs
1 ms
10 ms
-10 0
-10 0
-10 1
DC
V -10 2
VDS
Drain current
ID = ƒ(TC)
parameter: VGS ≥ -10 V
-24
A
-20
ID
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
0.01
single pulse
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BUZ272.PDF ] | |
Hoja de datos destacado
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| BUZ272 | SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated) | Siemens Semiconductor Group |
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