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What is BUZ21?

This electronic component, produced by the manufacturer "Intersil Corporation", performs the same function as "19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFET".


BUZ21 Datasheet PDF - Intersil Corporation

Part Number BUZ21
Description 19A/ 100V/ 0.100 Ohm/ N-Channel Power MOSFET
Manufacturers Intersil Corporation 
Logo Intersil Corporation Logo 


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Semiconductor
Data Sheet
BUZ21
October 1998 File Number 2420.1
19A, 100V, 0.100 Ohm, N-Channel Power
Features
MOSFET
[ /Title
(BUZ21)
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
/Subject switching regulators, switching converters, motor drivers,
(19A, relay drivers, and drivers for high power bipolar switching
• 19A, 100V
• rDS(ON) = 0.100
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
100V, transistors requiring high speed and low gate drive power.
0.100 This type can be operated directly from integrated circuits.
Ohm, N- Formerly developmental type TA9854.
Channel
Power Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
MOS-
FET)
PART NUMBER
PACKAGE
BUZ21
TO-220AB
BRAND
BUZ21
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
/Author NOTE: When ordering, use the entire part number.
Symbol
()
/Key-
D
words
(Harris
G
Semi-
conduc-
S
tor, N-
Channel
Power Packaging
MOS-
FET,
JEDEC TO-220AB
TO-
220AB)
/Creator
()
SOURCE
DRAIN
GATE
/DOCIN
FO pdf-
DRAIN (FLANGE)
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
pdfmark
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998

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BUZ21 equivalent
BUZ21
Typical Performance Curves Unless Otherwise Specified (Continued)
102
PULSE DURATION = 80µs
15
ID = 21A
101 TJ = 150oC
10
100 TJ = 25oC
5
VDS = 20V
VDS = 80V
10-10
0.5 1.0 1.5 2.0 2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
3.0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
RL
+
RG
VDD
-
DUT
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
0
0 10 20 30 40 50
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUZ21 electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
BUZ20The function is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated). Siemens Semiconductor GroupSiemens Semiconductor Group
BUZ20The function is 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET. Intersil CorporationIntersil Corporation
BUZ20The function is SIPMOS Power Transistor. Infineon Technologies AGInfineon Technologies AG

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