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What is BUZ11S2?

This electronic component, produced by the manufacturer "Siemens Semiconductor Group", performs the same function as "SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)".


BUZ11S2 Datasheet PDF - Siemens Semiconductor Group

Part Number BUZ11S2
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
Manufacturers Siemens Semiconductor Group 
Logo Siemens Semiconductor Group Logo 


There is a preview and BUZ11S2 download ( pdf file ) link at the bottom of this page.





Total 9 Pages



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No Preview Available ! BUZ11S2 datasheet, circuit

SIPMOS ® Power Transistor
BUZ 11 S2
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 11 S2
VDS
60 V
ID
30 A
RDS(on)
0.04
Maximum Ratings
Parameter
Continuous drain current
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25
L = 15.6 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1301-A5
Values
30
120
30
1.9
Unit
A
mJ
14
± 20
75
-55 ... + 150
-55 ... + 150
1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

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BUZ11S2 equivalent
BUZ 11 S2
Not for new design
Power dissipation
Ptot = ƒ(TC)
80
W
Ptot
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 3
A
I
D
10 2
I
V
R
10 1
tp = 45.0ns
100 ns
1 µs
10 µs
100 µs
1 ms
10 ms
10 0
10 0
DC
10 1 V 10 2
VDS
Drain current
ID = ƒ(TC)
parameter: VGS 10 V
32
A
ID
24
20
16
12
8
4
0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
0.01
single pulse
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
07/96


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUZ11S2 electronic component.


Information Total 9 Pages
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Download [ BUZ11S2.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
BUZ11S2The function is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated). Siemens Semiconductor GroupSiemens Semiconductor Group

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