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PDF BUZ111SL Data sheet ( Hoja de datos )
| Número de pieza | BUZ111SL | |
| Descripción | SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ111SL (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ111SL
VDS
55 V
ID
80 A
RDS(on)
0.01 Ω
BUZ111SL
SPP80N05L
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
Q67040-S4003-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25 Ω
L = 220 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
80
320
700
80
25
6
± 14
250
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
28/Jan/1998
1 page  
BUZ111SL
SPP80N05L
Power dissipation
Ptot = ƒ(TC)
260
W
220
Ptot 200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0, TC = 25°C
10 3
A
I
D
10 2
tp = 29.0µs
100 µs
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 4 V
90
A
ID 70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 0
K/W
10 -1
Z
thJC
10 -2
D = 0.50
1 ms
10 -3
0.20
10 1 0.10
10 ms
0.05
DC
10 -4
single pulse
0.02
0.01
10 0
10 0
10 1 V 10 2
VDS
10 -5
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
28/Jan/1998
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUZ111SL.PDF ] | |
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