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What is BUZ104S?

This electronic component, produced by the manufacturer "Siemens Semiconductor Group", performs the same function as "SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)".


BUZ104S Datasheet PDF - Siemens Semiconductor Group

Part Number BUZ104S
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
Manufacturers Siemens Semiconductor Group 
Logo Siemens Semiconductor Group Logo 


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No Preview Available ! BUZ104S datasheet, circuit

SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 104 S
VDS
55 V
ID
13.5 A
RDS(on)
0.1
BUZ 104 S
SPP14N05
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
Q67040-S4007-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 13.5 A, VDD = 25 V, RGS = 25
L = 571 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 13.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
13.5
9.6
54
52
13.5
3.5
6
± 20
35
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
29/Jan/1998

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BUZ104S equivalent
BUZ 104 S
SPP14N05
Power dissipation
Ptot = ƒ(TC)
Drain current
ID = ƒ(TC)
parameter: VGS 10 V
36
W
Ptot 28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 °C 180
TC
14
A
12
ID 11
10
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0, TC = 25°C
10 2
tp = 3.3µs
A
I
D
10 µs
10 1
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
100 µs
10 -1
D = 0.50
10 0
1 ms
0.20
0.10
10 ms
DC
10 -2
single pulse
0.05
0.02
0.01
10 -1
10 0
10 1 V 10 2
VDS
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
29/Jan/1998


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUZ104S electronic component.


Information Total 8 Pages
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Download [ BUZ104S.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
BUZ104The function is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance). Siemens Semiconductor GroupSiemens Semiconductor Group
BUZ104LThe function is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance). Siemens Semiconductor GroupSiemens Semiconductor Group
BUZ104SThe function is SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature). Siemens Semiconductor GroupSiemens Semiconductor Group

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