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PDF BUZ103S Data sheet ( Hoja de datos )
| Número de pieza | BUZ103S | |
| Descripción | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BUZ103S (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
• also in SMD available
Type
BUZ 103 S
VDS
55 V
ID
31 A
RDS(on)
0.04 Ω
BUZ 103 S
SPP31N05
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
Q67040-S4009-A2
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 31 A, VDD = 25 V, RGS = 25 Ω
L = 291 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 31 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Values
31
22
124
140
31
7.5
6
± 20
75
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
30/Jan/1998
1 page  
BUZ 103 S
SPP31N05
Power dissipation
Ptot = ƒ(TC)
80
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
32
W
Ptot
60
A
ID
24
50 20
40 16
30 12
20 8
10
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0, TC = 25°C
10 3
A
I
D
10 2
tp = 13.0µs
4
0
0 20 40 60 80 100 120 140 °C 180
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
10 0
Z
thJC
10 -1
10 1
10 0
10 0
100 µs
10 1
1 ms
10 ms
DC
V 10 2
VDS
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
5
30/Jan/1998
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BUZ103S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BUZ103 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) | Siemens Semiconductor Group |
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| BUZ103S | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) | Siemens Semiconductor Group |
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