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Datasheet BZX55C36 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BZX55C36Silicon Zener Diode, Rectifier

BZX55C SILICON PLANAR ZENER DIODES The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request. Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Max. 0.45 Max.
SEMTECH
SEMTECH		diode
2BZX55C36Small Signal Zener Diodes

www.vishay.com BZX55-Series Vishay Semiconductors Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. 2.4 to 75 Test current IZT 2.5; 5 VZ specification Pulse current Int. construction Single UNIT V mA FEATURES • Very sharp reverse characteristic • Low
Vishay
Vishay		diode
3BZX55C36500mW ZENER DIODES

ZENER DIODES SENSITRON SEMICONDUCTOR OPERATING AND STORAGE TEMPERATURE –55°C TO+200°C 500mW ZENER DIODES / DO-35/DL-35 (MINI MELF) TYPE Nominal Zener Voltage VZ @IZT Min BZX / BZV 55 C 2V4 BZX / BZV 55 C 2V7 BZX / BZV 55 C 3V0 BZX / BZV 55 C 3V3 BZX / BZV 55 C 3V6 BZX / BZV 55 C 3V9 BZX / BZV
SENSITRON
SENSITRON		diode
4BZX55C36500mW ZENER DIODE

BZX55C2V4 - BZX55C75 500mW ZENER DIODE Features · · · · Very Sharp Reverse Characteristic Low Reverse Current Level Very High Stability Low Noise NOT RECOMMENDED FOR NEW DESIGNS USE 1N5221B - 1N5267B A B A C D Mechanical Data · · · · Case: DO-35, Glass Terminals: Solderable per MIL-STD
Diodes Incorporated
Diodes Incorporated		diode
5BZX55C36VOLTAGE REGULATOR DIODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HI.REL APPLICATIONS

BZX55C Series MECHANICAL DATA Dimensions in mm(inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) VOLTAGE REGULATOR DIODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HI–REL APPLICATIONS A 1.40 (0
Seme LAB
Seme LAB		diode


BZX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BZX10Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
2BZX10Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
3BZX11Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
4BZX11Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
5BZX12Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode
6BZX12Zener Diode

w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w
COS
COS		diode
7BZX13Zener Diode

ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju
COS
COS		diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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