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G1000QC400 Datasheet PDF - IXYS

Part Number G1000QC400
Description Anode Shorted Gate Turn-Off Thyristor
Manufacturers IXYS 
Logo IXYS Logo 

Preview ( 15 pages )
		
G1000QC400 datasheet, circuit
WESTCODE
An IXYS Company
Date:- 31 Jan, 2008
Data Sheet Issue:- 1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor
Types G1000QC400 to G1000QC450
Absolute Maximum Ratings
VDRM
VRSM
VDC-link
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Maximum continuos DC-link voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
4500
4500
2800
18
18
UNITS
V
V
V
V
V
ITGQ
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms, (Note 4)
Peak non-repetitive surge current tp=2ms, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=2800V, VDM4500V diGQ/dt=25A/µs, ITGQ=1000A and CS=1µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR10V.
5) For di/dt>300A/µs please consult the factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
300
443
867
6500
11450
211.25×103
300
185
7
100A
18
80
20
-40 to +125
-40 to +125
UNITS
A
nH
A
A
A
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 1 of 15
January, 2008

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1 page
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G1000QC400 equivalent
WESTCODE An IXYS Company
Anode Shorted Gate Turn-Off Thyristor types G1000QC400 to G1000QC450
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 1 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated
period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM
& IG as for td of characteristic data.
IGM IG
100µs
Gate current
100µs
16V
Anode current
R1
Unlatched
unlatched condition
CT
Gate-drive
DUT
C1 Vs
Latched
Anode current
Latched condition
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is
open circuit or RGK is high impedance. Typical values: - dv/dt<100V/µs for RGK>10.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Diagram 6.
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 5 of 15
January, 2008

5 Page
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Information Total 15 Pages
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