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PDF 2SD601A Data sheet ( Hoja de datos )
| Número de pieza | 2SD601A | |
| Descripción | Silicon NPN Epitaxial Planer Type Transistors | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
Silicon NPN Epitaxial Planer Type
2SD601A
Features
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
60
50
7
100
200
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base current
Collector-emitter current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
Testconditons
VCBO IC = 20 ìA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 20 V, IE = 0 A
ICEO VCE = 10 V, IB = 0 A
hFE VCE = 10 V, IC = 2 mA
VCE(sat) IC = 100 mA, IB = 10 mA
fT VCB = 10 V, IE = -2 mA , f = 200 MHz
Cob VCB = 10V , IE = 0 , f = 1.0MHz
NV VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kW, Function = FLAT
Min Typ Max Unit
60 V
50 V
7V
0.1 ìA
100 ìA
160 460
0.1 0.3 V
150 MHz
3.5 pF
110 mV
hFE Classification
Marking
hFE
ZQ
160 260
ZR
210 340
ZS
290 460
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