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PDF MUR2005CT Data sheet ( Hoja de datos )
| Número de pieza | MUR2005CT | |
| Descripción | SUPER FAST RECOVERY RECTIFIER | |
| Fabricantes | GOOD ELECTRONIC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MUR2005CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MUR2005CT THRU MUR2060CT
SUPER FAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 20.0 Ampere
TO-220AB
FEATURES
0.419(10.66)MAX.
Ø 0.139(3.55)
MIN
0.054(1.39)
0.045(1.15)
0.196(5.0)
0.163(4.16)
◆ Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
Flame Retardant Epoxy Molding Compound.
◆ Exceeds environmental of MIL-S-19500/228
◆ Low power loss, high efficiency.
◆ Low forward voltage, high current capability.
◆ High surge capability.
◆ Super fast recovery times, high voltage.
◆ Epitaxial chip construction.
◆ In compliance with EU RoHS 2002/95/EC directives.
Pin 1
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.1(2.54)
Typ.
0.025(0.65)
MAX
Dimensions in inches and (millimeters)
0.115(2.92)
0.080(2.03)
MECHANICAL DATA
Case: TO-220AB, Molded plastic.
Terminals: Solderable per MIL-STD-750，Method 2026
Weight: 1.859 gram (0.0655 ounces).
Standard Packaging : Tube.
AC 1
AC 3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwis e specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
Maximum Recurrenent Peak Reverse Voltage
SYMBOLS
MUR
2005CT
VRRM
50
MUR
2010CT
100
MUR
2015CT
150
MUR
2020CT
200
MUR
2040CT
400
MUR
UNITS
2060CT
600 Volts
Maximum RMS Voltage
VRMS
35
70 105 140 280 420 Volts
Maximum DC Breakdown Voltage
VDC 50 100 150 200 400 600 Volts
Maximum Average Forward Current at TC =100°C
IF(AV)
Peak Forward Surge Current (Per Leg)
8.3ms single half sinewave superimposed on rated olad(JEDEC methode)
Maximum Forward Voltage at 10A
at IF=10.0A
Pre diode
Maximum DC Reverse Current at
Rated DC Blocking Voltage
TJ=25°C
TJ=100°C
Maximum Reverse Recovery Time (NOTE 2)
IFSM
VF
IR
trr
20.0
125.0
0.95
10.0
500
35
1.30
1.70
50
Amp
Amps
Volts
µA
nS
Typical Junction Capacitance (NOTE 1)
CJ
120 pF
Typical Thermal Resistance
Rθ JC
3.0 °C/W
Operating and Storage Temperature Range
TSTG
-55 ～ +150
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A.
3. Both Bonding and Chip structure are availiable.
GOOD ELECTRONIC CO., LTD
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MUR2005CT.PDF ] | |
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