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PDF SSF1116A Data sheet ( Hoja de datos )
| Número de pieza | SSF1116A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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SSF1116A
Feathers:
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
ID =75A
BV=110V
Rdson=12mΩ (Typ.)
Description:
The SSF1116A is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1116A is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
Continuous drain current,VGS@10V
ID@Tc=100ْC Continuous drain current,VGS@10V
IDM
PD@TC=25ْC
Pulsed drain current ①
Power dissipation
Linear derating factor
VGS
EAS
EAR
dv/dt
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Peak diode recovery voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
SSF1116A TOP View (D2PAK)
Max.
75
61
300
272
1.5
±20
300
TBD
31
–55 to +175
Units
A
W
W/ ْC
V
mJ
mJ
v/ns
ْC
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-case
Junction-to-ambient
Min. Typ. Max.
— 0.55 —
— — 62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
RDS(on)
VGS(th)
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
110
—
2.0
—
120
12
—
—
—V
16 mΩ
4.0 V
2
IDSS Drain-to-Source leakage current — —
μA
10
Gate-to-Source forward leakage
IGSS Gate-to-Source reverse leakage
©Silikron Semiconductor Corporation
— — 100
— — -100
2010.12.1
nA
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=110V,VGS=0V
VDS=110V,
VGS=0V,TJ=150ْC
VGS=20V
VGS=-20V
Version: 1.1
page 1of5
1 page  
D2PAK MECHANICAL DATA:
SSF1116A
©Silikron Semiconductor Corporation
2010.12.1
Version: 1.1
page 5of5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSF1116A.PDF ] | |
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