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Datasheet 2N2484 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N2484 | NPN SILICON AMPLIFIER TRANSISTOR SEME
LAB
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
2N2484
NPN SILICON AMPLIFIER TRANSISTOR
FEATURES
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
4.32 (0.170)
12.7 (0.500) 5.33 (0.210)
min.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
T |  Seme LAB | transistor |
| 2 | 2N2484 | NPN SILICON TRANSISTOR 2N2484 NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emit |  Central Semiconductor | transistor |
| 3 | 2N2484 | AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (2 T/\ = 25°C Derate above 25°C
Total Device Dissipation (a Trj = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol |  Motorola Semiconductors | transistor |
| 4 | 2N2484 | NPN Bipolar Transistor NPN Bipolar Transistor
Features:
• Collector Emitter Breakdown Voltage • DC Current Gain • Current Gain Bandwidth Product • Low Noise Figure
: BVCEO = 60 V dc (minimum) at IC = 10 mA dc : 1 µA dc to 10 mA dc
: fT = 100 MHz (Typical) at IC = 500 µA dc : NF = 8 dB (Typical) at IC = 10 µA |  Multicomp | transistor |
| 5 | 2N2484 | NPN SILICON PLANAR TRANSISTOR Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N2484 TO-18
This transistors is primarily intended for use in high performance, low level, low noise amplifier applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
SYMBOL
VALUE |  CDIL | transistor |
2N2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N20 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N20
·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.5Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converte  Inchange Semiconductor mosfet | | |
| 2 | 2N2000 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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| 3 | 2N2001 | (2N2000 / 2N2001) alloy-junction germanium transistors w
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ETC transistor | | |
| 4 | 2N2017 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A Central Semiconductor transistor | | |
| 5 | 2N2017 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 6 | 2N2018 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | | |
| 7 | 2N2019 | Trans GP BJT NPN 60V 0.5A 6-Pin TO-78 New Jersey Semiconductor data | |
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