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PDF 1N4447 Data sheet ( Hoja de datos )
| Número de pieza | 1N4447 | |
| Descripción | Small Signal Diode | |
| Fabricantes | Fairchild Semiconductor | |
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1N4447
Small Signal Diode
August 2011
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
100
200
1.0
4.0
V
mA
A
A
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
-65 to +200
175
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Units
mW
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
VR
Breakdown Voltage
IR = 100μA
IR = 5.0μA
100
75
VF Forward Voltage
IF = 20mA
IR Reverse Leakage
VR = 20V
VR = 20V, TA = 150°C
CT Total Capacitance
VR = 0, f = 1.0MHz
trr Reverse Recovery Time IF = 10mA, VR = 6.0V
Irr = 1.0mA, RL = 100Ω
Max.
1.0
25
50
2.0
4.0
Units
V
V
V
nA
μA
pF
ns
© 2011 Fairchild Semiconductor Corporation
1N4447 Rev. A0
1
www.fairchildsemi.com
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