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PDF 1N4150-1 Data sheet ( Hoja de datos )
| Número de pieza | 1N4150-1 | |
| Descripción | Silicon Switching Diode | |
| Fabricantes | MA-COM | |
| Logotipo |  |
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1N3600, 1N4150 & 1N4150-1
Silicon Switching Diode
Features
Available in JAN, JANTX, and JANTXV per
MIL-PRF-19500/231
Metallurgically Bonded
Hermetically Sealed
Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = +25°C
Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8”
Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0
Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0
Rev. V1
Electrical Specifications @ +25°C (unless otherwise Specified)
TYPE #
VBR
IR = 10 μA
VRWM
1N3600
1N4150, -1
V dc
75
75
V (pk)
50
50
IR1
VR = 50 Vdc
TA = 25°C
μA dc
0.1
0.1
IR2
VR = 50 Vdc
TA =150°C
μA dc
100
100
C Trr
IR = 0; f = 1 MHz
IF = IR = 10 to 100 mA dc
ac signal = 50 mV (p-P)
RL = 100 Ω
pF ns
2.5 4.0
2.5 4.0
Forward Voltage Limits - All Types
Limits
minimum
maximum
VF1
IF = 1 mA dc
V dc
0.540
0.620
VF2
IF = 10 mA dc
V dc
0.660
0.740
VF3
IF = 50 mA dc
(Pulsed)
V dc
0.760
0.860
VF4
IF = 100 mA dc
(Pulsed)
V dc
0.820
0.920
VF5
IF = 200 mA dc
(Pulsed)
V dc
0.870
1.000
1
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| PDF Descargar | [ Datasheet 1N4150-1.PDF ] | |
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