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What is J176?

This electronic component, produced by the manufacturer "Vishay", performs the same function as "P-Channel JFETs".


J176 Datasheet PDF - Vishay

Part Number J176
Description P-Channel JFETs
Manufacturers Vishay 
Logo Vishay Logo 


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J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
J174
J175
J176
J177
SST174
SST175
SST176
SST177
PRODUCT SUMMARY
Part Number
J/SST174
J/SST175
J/SST176
J/SST177
VGS(off) (V)
5 to 10
3 to 6
1 to 4
0.8 to 2.25
rDS(on) Max (W)
85
125
250
300
ID(off) Typ (pA)
–10
–10
–10
–10
tON Typ (ns)
25
25
25
25
FEATURES
D Low On-Resistance: J174 <85 W
D Fast Switching—tON: 25 ns
D Low Leakage: –10 pA
D Low Capacitance: 5 pF
D Low Insertion Loss
BENEFITS
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering
APPLICATIONS
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching. This
series simplifies series-shunt switching applications when
combined with the Siliconix J/SST111 series.
TO-226AA
(TO-92)
D1
G2
S3
Top View
J174
J175
J176
J177
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package provides
surface-mount capability. Both the J and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-236
(SOT-23)
D1
S2
3G
Top View
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-1

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J176 equivalent
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Turn-On Switching
50
tr approximately independent of ID
VDD = 10 V, RG = 220 W
VGS(H) = 10 V, VGS(L) = 0 V
40
Turn-Off Switching
20
tf VGS(off) = 1.5 V
16
5V
30 tON @ ID = 5 mA
20
tON @ ID = 10 mA
12
td(off) VGS(off) = 1.5 V
8
5V
10
0
0
tr @ ID = 5 mA
12 3 4
VGS(off) Gate-Source Cutoff Voltage (V)
5
4
VDD = 10 V, VGS(H) = 10 V, VGS(L) = 0 V
0
0 3 6
9 12
ID Drain Current (mA)
15
Capacitance vs. Gate-Source Voltage
30
VDS = 0 V
f = 1 MHz
24
18
Ciss
12
Crss
6
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
Gate Leakage Current
TA = 125_C
ID = 1 mA
10 mA
IGSS @ 125_C
TA = 25_C
10 mA
1 mA
IGSS @ 25_C
0
04
8 12 16 20
VGS Gate-Source Voltage (V)
0.1 pA
0
10 20 30 40
VDG Drain-Gate Voltage (V)
50
Transfer Characteristics
40
VGS(off) = 3 V
32
VDS = 15 V
Noise Voltage vs. Frequency
100
ID = 0.1 mA
24 TA = 55_C
16 25_C
1 mA
10
8
0
0
125_C
1 2 34
VGS Gate-Source Voltage (V)
Document Number: 70257
S-04030Rev. E, 04-Jun-01
5
VDS = 10 V
1
10
100 1 k 10 k
f Frequency (Hz)
100 k
www.vishay.com
9-5


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