J108 Datasheet PDF - Motorola Semiconductors
Part Number | J108 | |
Description | JFET GENERAL-PURPOSE TRANSISTOR | |
Manufacturers | Motorola Semiconductors | |
Logo | ||
There is a preview and J108 download ( pdf file ) link at the bottom of this page. Total 3 Pages |
Preview 1 page No Preview Available ! MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
Total Device Dissipation (a T/\ = 25°C
Derate above 25°C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
VDG
VGS
"G
PD
Tj
Tstg
Value
-25
-25
10
310
2.82
135
-65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
J107, J108
J109, J110
CASE 29-02, STYLE 5
TO-92 (TO-226AA)
JFET
GENERAL-PURPOSE
TRANSISTOR
—N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(VDS = 0, Iq = -10 MAdc)
Gate Reverse Current
(VG S = -15 Vdc, VDS = 0)
(Vqs = -15 Vdc, VDs = 0, TA = 100°C)
Gate Source Cutoff Voltage
(Vds = 15 Vdc, Iq = 10 nAdc)
ON CHARACTERISTICS
J 107
J108
J109
J110
Zero-Gate-Voltage Drain Current(1)
(vD s = 15, vG s = o)
J107
J108
J109
J110
Drain-Source On-Resistance
(v Ds < 0.1 v, v GS = o v)
SMALL-SIGNAL CHARACTERISTICS
J107
J108
J109
J110
Drain Gate + Source Gate On-Capacitance
(Vds = o vdc, v G s = o, f = 1.0 mhz)
Drain Gate Off-Capacitance
(Vds = o vdc, v G s = - 10 v, f = i.o MHz)
Sou'ce Gate Off-Capacitance
(Vds = o vdc, vgs = -10 v, f = 1.0 mhz)
(1) Pulse Duration 300 jis. Duty Cycle s 2.0%.
Symbol
Min
V (BR)GSS
'GSS
-25
-
v GS(off)
-0.5
-3.0
-2.0
-0.5
!DSS
r DS(on)
c dg(on)
+
c sg(on)
c dg(off)
c sg(off)
100
80
40
10
—
—
—
-
—
—
—
Typ Max Unit
- - Vdc
- -3.0
nAdc
-200
Vdc
-4.5
-10
- -6.0
-4.0
— mAdc
—
—
——
'
— ohms
8.0
— 8.0
_ 12
— 18
— 85 PF
—
.
15
— 15
PF
PF
6-105
|
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for J108 electronic component. |
Information | Total 3 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ J108.PDF Datasheet ] |
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