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PDF 1N4372 Data sheet ( Hoja de datos )
| Número de pieza | 1N4372 | |
| Descripción | SILICON PLANAR ZENER DIODES | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N4372 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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1N746-1N759
High-reliability discrete products
and engineering services since 1977
SILICON PLANAR ZENER DIODES
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Operating and Storage Temperature
Thermal Resistance
Steady State Power
Forward Voltage @ 200mA
Solder Temperatures:
-65 to +175°C
250°C/W junction to lead at 3/8” lead length from body
0.5 Watts at TL ≤ 50°C
1.1 Volts
260°C for 10 s (max)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Normal Zener
Zener
Maximum Zener
Part
Number
(Note 1)
Voltage
VZ @ lZT
(Note 2)
Test
Current
lZT
Impedance
ZZT @ lZT
(Note 3)
Maximum Reverse
Leakage Current
VR = 1 Volt
Maximum
Zener Current
lZM
(Note 4)
Typical
Temperature
Coefficient
Of Zener
Voltage
VOLTS
mA
OHMS
μA @ 25°C μA @ 125°C
mA
%/°C
1N4370
2.4
20
30
100 200
150
-.085
1N4371
2.7
20
30
75 150
135
-.080
1N4372
3.0
20
29
50 100
120
-.075
1N746
3.3
20
28
10 30
110
-.066
1N747
3.6
20
24
10 30
100
-.058
1N748
3.9
20
23
10 30
95
-.046
1N749
4.3
20
22
2 30
85
-.033
1N750
4.7
20
19
2 30
75
-.015
1N751
5.1
20
17
1 20 70 ±.010
1N752
5.6
20
11
1 20 65 +.030
1N753
6.2
20
7
0.1 20 60 +.049
1N754
6.8
20
5
0.1 20 55 +.053
1N755
7.5
20
6
0.1 20 50 +.057
1N756
8.2
20
8
0.1 20 45 +.060
1N757
9.1
20
10
0.1 20
40
+.061
1N758
10
20
17 0.1 20
35
+.062
1N759
12
20
30 0.1 20
30
+.062
Notes:
1. Suffix letter A denotes ±5% tolerance, suffix C denotes ±2% tolerance, & suffix D denotes ±1% tolerance.
2. Voltage measurements to be performed 20 seconds after application of dc current.
3. Zener impedance derived by superimposing on lZT, a 60cps, rms ac current equal to 10% lZT (2mA ac)
4. Allowance has been made for the increase in VZ due to ZZ and for the increase in junction temperature as the unit approaches thermal
equilibrium at the power dissipation of 400mW.
Rev. 20120328
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1N4372.PDF ] | |
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