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PDF BCX30 Data sheet ( Hoja de datos )
| Número de pieza | BCX30 | |
| Descripción | HIGH VOLTAGE TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
tc
PD
Pd
Tj. T stg
Symbol
R*jc
Rwjc
BCX BCX BCX
26 28 30
60 80 100
60 80 100
5.0
200
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
m\/V/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BCX26
BCX28
BCX30
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
HIGH VOLTAGE TRANSISTORS
PNP SILICON
Refer to MPS8598 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
(IC = 1 mAdc, Ib = 0)
BCX26
BCX28
BCX30
V(BR)CE0
Collector-Base Breakdown Voltage
(IC = 100 uAdc, l£ = 0)
BCX26
BCX28
BCX30
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 |iAdc, lc = 0)
Collector Cutoff Current
(Vcb = 40 Vdc - l£ = 0)
(Vcb = 60 Vdc - Ie = 0)
(Vcb = 80 Vdc - Ie = 0)
ON CHARACTERISTICS*
BCX26
BCX28
BCX30
V(BR)EB0.
ICBO
DC Current Gain
(IC = 1 mAdc, VcE = 5.0 Vdc)
(IC = 1 mAdc, Vce = 5.0 Vdc)
(IC = 100 mAdc, VcE = 5.0 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, Ib = 10 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base-Emitter On Voltage
(IC = 1 mAdc, Vce = 5.0 Vdc)
Pulse test-Pulse width £ 300 us - Duty cycle 2 C
VBE(sat)
VBE(on)
60
80
100
60
80
100
5.0
50
70
50
Typ.
Max.
100
100
100
150
160
120
0.125
0.85
0.65
400
0.25
1.0
Unit
Vdc
Vdc
Vdc
nAdc
Vdc
Vdc
Vdc
2-125
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCX30.PDF ] | |
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