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PDF BCX25 Data sheet ( Hoja de datos )
| Número de pieza | BCX25 | |
| Descripción | HIGH VOLTAGE TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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7
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj. T st g
Symbol
Rejc
Rwc
BCX BCX BCX
25 27 29
60 80 100
60 80 100
5.0
200
350
2.8
1.0
8.0
-55 to +150
Max
125
357
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
BCX25
BCX27
BCX29
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
HIGH VOLTAGE TRANSISTORS
NPN SILICON
Refer to MPS8098 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symhol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
dC = 10 mAdc, IB = 0)
BCX25
BCX27
BCX29
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = 100 uAdc, Ie = 0)
BCX25
BCX27
BCX29
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 uAdc, Ic = 0)
Collector Cutoff Current
Vcb = 40 Vdc - Ie =
VcB = 60 Vdc - Ie =
VcB = 80 Vdc - Ie =
BCX25
BCX27
BCX29
ON CHARACTERISTICS*
V(BR)EBO
ICBO
DC Current Gain
(IC = 1 mAdc, VcE = 5.0 Vdc)
(IC = 10 mAdc, VcE = 5.0 Vdc)
dC = 100 mAdc, VcE = 5.0 Vdc)
hFE
CoJIector-Emitter Saturation Voltage
(ic = 100 mAdc, Ib = 10 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VBE(sat)
Base-Emitter On Voltage
(IC = 1 mAdc, VcE = 5.0 Vdc)
* Pulse test-Pulse width s 300 us - Duty cycle 2%
VBE(on)
Min.
60
80
100
45
80
100
5.0
50
70
50
Typ.
150
250
300
0.1
0.85
0.68
Unit
Vdc
Vdc
100
100
100'
Vdc
nAdc
400
0.25
1.0
Vdc
Vdc
Vdc
2-123
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCX25.PDF ] | |
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