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PDF MMBT6543 Data sheet ( Hoja de datos )
| Número de pieza | MMBT6543 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO
VCBO
VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, T/^ = 25°C
Derate above 25°C
P.D
Storage Temperature
T stg
'Thermal Resistance Junction to Ambient
R&JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
25
35
3.0
50
Max
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
"C/W
.
MMBT6543
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
AMPLIFIER TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
dC = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
dC = 100 /xAdc, lg = 0)
Emitter-Base Breakdown Voltage
E(l = 100 juAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 25 Vdc, lg = 0)
Emitter Cutoff Current
(V BE = 2.0 Vdc, Ic = 0)
ON CHARACTERISTICS
DC Current Gain(2)
dC = 4.0 mAdc, Vqe = 10 Vdc)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 10 mAdc)
Base-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 4.0 mAdc, Vce = 12 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 10 vdc, i£ = o, f = 1.0 mhz>
Collector Base Time Constant
E(l = 4.0 mAdc, Vce = 12 Vdc, f = 31.8 MHz)
(2) Pulse Test: Pulse Width « 300 ^s. Duty Cycle =s 2.0%.
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
'CBO
!EBO
25
35
3.0
—
—
hFE
VCE(sat)
v BE(sat>
25
—
—
h
Cobo
rb'C c
750
—
—
Typ Max
|
——
——
——
— 0.1
— 1.0
Unit
|
Vdc
Vdc
Vdc
/xAdc
juAdc
60 — —
200 350 mVdc
750 950 mVdc
—1100
MHz
0.8 1.0 pF
— 9.5 ps
3-103
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet MMBT6543.PDF ] | |
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