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Datasheet MRF517 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | MRF517 | HIGH FREQUENCY TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Rbe = 330fi) Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T"c = 50°C Derate above 50°C
Junction Temperature Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Ju |
 Motorola Semiconductors |
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| 9 | MRF517 | NPN SILICON HIGH FREQUENCY TRANSISTOR MRF517
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI MRF517 is Designed for High Linearity Class A Amplifier Applications in the 100 to 500 MHz Frequency Range.
PACKAGE STYLE TO-39
MAXIMUM RATINGS
IC 150 mA
VCBO
PDISS
TJ TSTG θJC
35 V 2.5 W @ TC = 50 OC 20 mW/OC @ TC = 50 OC
-65 |
 ASI |
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| 8 | MRF517 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF517
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product @ 60mA • B |
 Advanced Power Technology |
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| 7 | MRF517 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF517
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Gpe = 10 dB (typ) @ 60 mA, 300 MHz 3 GHz Current-Gain Bandwid |
 Microsemi Corporation |
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