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Datasheet UD4KB80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | UD4KB80 | Bridge Diode 定格表 RATINGS
UD4KB80
●絶対最大定格 Absolute Maximum Ratings （指定のない場合は、Tc=25℃ / unless otherwise specified ）
項目 記号 Item Symbol
条件 Conditions
規格値 Ratings
保存温度 Storage Temperature
Tstg
-55～150
単位 Unit
℃
接合部温度 O |  SHINDENGEN | diode |
UD4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | UD4606 | DUAL ENHANCEMENT MODE Power MOSFET UNISONIC TECHNOLOGIES CO., LTD
UD4606
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UTC UD4606 provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for lot  Unisonic Technologies mosfet | | |
| 2 | UD4606Q | Power MOSFET, Transistor UNISONIC TECHNOLOGIES CO., LTD
UD4606Q
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UTC UD4606Q provides excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary MOSFETs may be help to form a level shifted high side switch and also for l Unisonic Technologies mosfet | | |
| 3 | UD4614 | DUAL ENHANCEMENT MODE UNISONIC TECHNOLOGIES CO., LTD UD4614
DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
DESCRIPTION
SOP-8
Power MOSFET
The UTC UD4614 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UTC UD4614 may be used in H-bridge, inverters and other application Unisonic Technologies data | | |
| 4 | UD4KB80 | Bridge Diode 定格表 RATINGS
UD4KB80
●絶対最大定格 Absolute Maximum Ratings （指定のない場合は、Tc=25℃ / unless otherwise specified ）
項目 記号 Item Symbol
条件 Conditions
規格値 Ratings
保存温度 Storage Temperature
Tstg
-55～150
単位 Unit
℃
接合部温度 O SHINDENGEN diode | |
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