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What is MT8KTF51264HZ?

This electronic component, produced by the manufacturer "Micron", performs the same function as "4GB 1.35V DDR3L SDRAM SODIMM".


MT8KTF51264HZ Datasheet PDF - Micron

Part Number MT8KTF51264HZ
Description 4GB 1.35V DDR3L SDRAM SODIMM
Manufacturers Micron 
Logo Micron Logo 


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1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3L SODIMM
Features
1.35V DDR3L SDRAM SODIMM
MT8KTF12864HZ – 1GB
MT8KTF25664HZ – 2GB
MT8KTF51264HZ – 4GB
Features
• DDR3L functionality and operations supported as
defined in the component data sheet
• 204-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC3-14900, PC3-12800, or
PC3-10600
• 1GB (128 Meg x 64), 2GB (256 Meg x 64), 4GB (512
Meg x 64)
• VDD = 1.35V (1.283–1.45V)
• VDD = 1.5V (1.425–1.575V)
• Backward compatible with standard 1.5V (±0.075V)
DDR3 systems
• VDDSPD = 3.0–3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Single rank
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• On-board I2C serial presence-detect (SPD) EEPROM
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Figure 1: 204-Pin SODIMM (MO-268 R/C B2, B4)
Module height: 30mm (1.181in)
Options
• Operating temperature
– Commercial (0°C TA +70°C)
• Package
– 204-pin DIMM (halogen-free)
• Frequency/CAS latency
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
Marking
None
Z
-1G9
-1G6
-1G4
Table 1: Key Timing Parameters
Speed Industry
Grade Nomenclature
-1G9
PC3-14900
-1G6
PC3-12800
-1G4
PC3-10600
-1G1
PC3-8500
-1G0
PC3-8500
-80B
PC3-6400
CL =
13
1866
CL =
11
1600
1600
Data Rate (MT/s)
CL =
10 CL = 9 CL = 8 CL = 7
1333 1333 1066 1066
1333 1333 1066 1066
1333 1333 1066 1066
– – 1066 1066
– – 1066 –
––––
CL = 6
800
800
800
800
800
800
CL = 5
667
667
667
667
667
667
tRCD
(ns)
13.125
13.125
13.125
13.125
15
15
tRP
(ns)
13.125
13.125
13.125
13.125
15
15
tRC
(ns)
47.125
48.125
49.125
50.625
52.5
52.5
PDF: 09005aef84577368
ktf8c128_256_512x64hz.pdf - Rev. K 7/15 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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MT8KTF51264HZ equivalent
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3L SODIMM
Pin Descriptions
Table 7: Pin Descriptions (Continued)
Symbol
SDA
TDQSx,
TDQSx#
Err_Out#
EVENT#
VDD
VDDSPD
VREFCA
VREFDQ
VSS
VTT
NC
NF
Type
I/O
Output
Output
(open drain)
Output
(open drain)
Supply
Supply
Supply
Supply
Supply
Supply
Description
Serial data: Used to transfer addresses and data into and out of the temperature sen-
sor/SPD EEPROM on the I2C bus.
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are
no function.
Parity error output: Parity error found on the command and address bus.
Temperature event: The EVENT# pin is asserted by the temperature sensor when crit-
ical temperature thresholds have been exceeded.
Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.
Reference voltage: Control, command, and address VDD/2.
Reference voltage: DQ, DM VDD/2.
Ground.
Termination voltage: Used for control, command, and address VDD/2.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functional-
ity.
PDF: 09005aef84577368
ktf8c128_256_512x64hz.pdf - Rev. K 7/15 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.


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Featured Datasheets

Part NumberDescriptionMFRS
MT8KTF51264HZThe function is 4GB 1.35V DDR3L SDRAM SODIMM. MicronMicron

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