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What is MT4HTF6464AY?

This electronic component, produced by the manufacturer "Micron", performs the same function as "512MB DDR2 SDRAM UDIMM".


MT4HTF6464AY Datasheet PDF - Micron

Part Number MT4HTF6464AY
Description 512MB DDR2 SDRAM UDIMM
Manufacturers Micron 
Logo Micron Logo 


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128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
Features
DDR2 SDRAM UDIMM
MT4HTF1664AY – 128MB
MT4HTF3264AY – 256MB
MT4HTF6464AY – 512MB
Features
240-pin, unbuffered dual in-line memory module
(UDIMM)
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
128MB (16 Meg x 64), 256MB (32 Meg x 64),
512MB (64 Meg x 64)
VDD = VDDQ = 1.8V
VDDSPD = 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Multiple internal device banks for concurrent
operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Single rank
Figure 1: 240-Pin UDIMM (MO-237 R/C C)
Module height 30.0mm (1.18in)
Options
Operating temperature
Commercial (0°C TA +70°C)
Industrial (–40°C TA +85°C)1
Package
240-pin DIMM (lead-free)
Frequency/CL2
2.5ns @ CL = 5 (DDR2-800)4
2.5ns @ CL = 6 (DDR2-800)4
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)3
5.0ns @ CL = 3 (DDR2-400)3
Marking
None
I
Y
-80E
-800
-667
-53E
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Contact Micron for product availability.
4. Not available in 128MB and 256MB.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
553
400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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MT4HTF6464AY equivalent
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
Pin Descriptions
Table 7: Pin Descriptions (Continued)
Symbol
SDA
RDQSx,
RDQS#x
Err_Out#
VDD/VDDQ
VDDSPD
VREF
VSS
NC
NF
NU
RFU
Type
I/O
Output
Output
(open drain)
Supply
Supply
Supply
Supply
Description
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I2C bus.
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Parity error output: Parity error found on the command and address bus.
Power supply: 1.8V ±0.1V. The component VDD and VDDQ are connected to the mod-
ule VDD.
SPD EEPROM power supply: 1.7–3.6V.
Reference voltage: VDD/2.
Ground.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functionality.
Not used: These pins are not used in specific module configurations/operations.
Reserved for future use.
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2003 Micron Technology, Inc. All rights reserved.


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Part NumberDescriptionMFRS
MT4HTF6464AYThe function is 512MB DDR2 SDRAM UDIMM. MicronMicron

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