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What is MT4HTF6464HZ?

This electronic component, produced by the manufacturer "Micron", performs the same function as "512MB DDR2 SDRAM SODIMM".


MT4HTF6464HZ Datasheet PDF - Micron

Part Number MT4HTF6464HZ
Description 512MB DDR2 SDRAM SODIMM
Manufacturers Micron 
Logo Micron Logo 


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256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Features
DDR2 SDRAM SODIMM
MT4HTF3264HZ – 256MB
MT4HTF6464HZ – 512MB
MT4HTF12864HZ – 1GB
Features
• 200-pin, small-outline dual in-line memory module
(SODIMM)
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB
(128 Meg x 64)
• VDD = VDDQ = 1.8V
• VDDSPD = 1.7–3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Halogen-free
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
Figure 1: 200-Pin SODIMM (MO-224 R/C C)
Module height: 30mm (1.181in)
Options
• Operating temperature
– Commercial (0°C TA +70°C)
– Industrial (–40°C TA +85°C)1
• Package
– 200-pin DIMM (halogen-free)
• Frequency/CL2
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
Marking
None
I
Z
-80E
-800
-667
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
Table 1: Key Timing Parameters
Speed
Grade
-80E
-800
-667
-53E
-40E
Industry
Nomenclature
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
CL = 6
800
800
Data Rate (MT/s)
CL = 5
CL = 4
800 533
667 533
667 553
– 553
– 400
CL = 3
400
400
400
400
400
tRCD
(ns)
12.5
15
15
15
15
tRP
(ns)
12.5
15
15
15
15
tRC
(ns)
55
55
55
55
55
PDF: 09005aef83c05a5d
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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MT4HTF6464HZ equivalent
256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM
Pin Descriptions
Table 7: Pin Descriptions (Continued)
Symbol
SDA
RDQSx,
RDQS#x
Err_Out#
VDD/VDDQ
VDDSPD
VREF
VSS
NC
NF
NU
RFU
Type
I/O
Output
Output
(open drain)
Supply
Supply
Supply
Supply
Description
Serial data: Used to transfer addresses and data into and out of the SPD EEPROM on
the I2C bus.
Redundant data strobe (x8 devices only): RDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When RDQS is enabled, RDQS
is output with read data only and is ignored during write data. When RDQS is disa-
bled, RDQS becomes data mask (see DMx). RDQS# is only used when RDQS is enabled
and differential data strobe mode is enabled.
Parity error output: Parity error found on the command and address bus.
Power supply: 1.8V ±0.1V. The component VDD and VDDQ are connected to the mod-
ule VDD.
SPD EEPROM power supply: 1.7–3.6V.
Reference voltage: VDD/2.
Ground.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functional-
ity.
Not used: These pins are not used in specific module configurations/operations.
Reserved for future use.
PDF: 09005aef83c05a5d
htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.


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