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Número de pieza | WNMD2180 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | WillSEMI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WNMD2180 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! WNMD2180
Dual N-Channel, 20V, 11A, Power MOSFET
VDS (V)
20
Typical Rds(on) (mΩ)
8.5@ VGS=4.5V
8.9@ VGS=3.8V
9.6@ VGS=3.1V
11@ VGS=2.5V
ESD Protected
Descriptions
The WNMD2180 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNMD2180 is Pb-free and
Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN3×3-8L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
WNMD2180
Http://www.sh-willsemi.com
PDFN3×3-8L
Pin configuration (Top view)
87 65
2180
NDYW
1 234
2180
ND
Y
W
= Device Code
= Special Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WNMD2180-8/TR PDFN3×3-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 2016/11/21- Rev.1.1
1 page 1600
1200
800
400
0
0
VGS=0V
f=1MHZ
4 8 12
V -Drain to Source Voltage(V)
DS
Capacitance
50
40
30
20
10
0
1E-3
TJ(Max)=150C
TA=25C
0.01
0.1 1
Pulse width (S)
10
100
Single pulse power
WNMD2180
20
15
10 T=150OC
5 T=25OC
0
0.0 0.4 0.8 1.2
VSD- Source to Drain Voltage(V)
Body diode forward voltage
Safe operating power
Will Semiconductor Ltd.
Gate Charge Characteristics
5
2016/11/21- Rev.1.1
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet WNMD2180.PDF ] |
Número de pieza | Descripción | Fabricantes |
WNMD2180 | MOSFET ( Transistor ) | WillSEMI |
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