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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN MJE 系列晶体管/MJE SERIES TRANSISTORS
MJE13007
●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
■●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA RoHS COMPLIANT
●应用:节能灯 电子镇流器 电子变压器 开关电源
●APPLICATION: ■FLUORESCENT LAMP ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER
■ SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C)
●Absolute Maximum Ratings(Tc=25°C) TO-220/220S/262/263
参数
符号
额定值
单位
PARAMETER
SYMBOL
VALUE
UNIT
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
发射极-基极电压
Emitter- Base Voltage
集电极电流
Collector Current
VCBO
VCEO
VEBO
IC
700 V
400 V
9V
8.0 A
集电极耗散功率
Total Power Dissipation
Ptot
TO-220/220S:90
TO-262/263:85
W
最高工作温度
Junction Temperature
Tj
150
贮存温度
Storage Temperature
Tstg
-65-150
●电特性(Tc=25°C)
●Electronic Characteristics(Tc=25°C)
°C
°C
参数名称
符号
测试条件
最小值 最大值
单位
CHARACTERISTICS
SYMBOL TEST CONDITION
MIN
MAX
UNIT
集电极-基极截止电流
Collector-Base Cutoff Current
集电极-发射极截止电流
Collector-Emitter Cutoff Current
集电极-基极电压
Collector-Base Voltage
ICBO
ICEO
VCBO
VCB=700V
VCE=400V,IB=0
IC=1mA,IE=0
100
250
700
μA
μA
V
集电极-发射极电压
Collector-Emitter Voltage
发射极 -基极电压
Emitter- Base Voltage
VCEO
VEBO
IC=10mA,IB=0
IE=1mA,IC=0
400
9
V
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vcesat
Vbesat
IC=2.0A,IB=0.4A
IC=8.0A,IB=2.0A
IC=2A,IB=0.4A
0.4
V
1.5
1.5 V
电流放大倍数
DC Current Gain
VCE=5V,IC=10mA
7
hFE VCE=5V,IC=2.0A 10
VCE=5V,IC=8A
5
40
贮存时间/Storage Time
下降时间/Falling Time
tS
tf
VCC=5V,IC=0.5A
(UI9600)
4.0
9.0
0.8
µs
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料
Normal Package Material
无卤塑封料
Halogen Free
TO-220 普通袋装/NORMAL PACKING
MJE13007 TO-220
MJE13007 TO-220-HF
TO-220S 普通袋装/NORMAL PACKING
MJE13007 TO-220S
MJE13007 TO-220S-HF
TO-220 条管装/TUBE PACKING
MJE13007 TO-220-TU
MJE13007 TO-220-TU-HF
TO-262 普通袋装/NORMAL PACKING
TO-262 或 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
MJE13007 TO-262
MJE13007 TO-262-TU 或
MJE13007 TO-263-TU
MJE13007 TO-263-TR
MJE13007 TO-262-HF
MJE13007 TO-262-TU-HF 或
MJE13007 TO-263-TU-HF
MJE13007 TO-263-TR-HF
Si semiconductors 2013.12
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