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PDF GS66516T Data sheet ( Hoja de datos )
| Número de pieza | GS66516T | |
| Descripción | Top cooled 650V enhancement mode GaN transistor | |
| Fabricantes | GaN Systems | |
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GS66516T
Top cooled 650V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Features
– 650V enhancement mode power switch
– Top cooled configuration
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Reverse current capability
– Integral source sense
– Dual gate pads for optimal board layout
– Zero reverse recovery loss
– RoHS 6 compliant
Applications
– On-board battery chargers
– 400V DC-DC conversion
– Inverters, UPS, and VFD motor drive
– AC-DC power supplies (PFC & primary)
– VHF small form factor power adapters
– High frequency, high efficiency power
conversion
top view
D
TP
GG
S
TP = thermal pad - internally connected to
the source (S) and to the substrate.
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C) (Note 1)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C) (Note 2)
(1) Saturation imposes current limit
(2) Pulse width is limited by TJ(max)
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Thermal Resistance (junction to case)
Maximum Soldering Temperature (MSL3 rated)
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
ID‚pulse
Value
-55 to +150
-55 to +150
650
±10
60
47
120
Units
°C
°C
V
V
A
A
A
Symbol
RΘJC
TSOLD
Value
0.25
260
Units
°C /W
°C
Ordering Information
Part number
GS66516T
GS66516T
Package type
GaNPX top-cooled
GaNPX top-cooled
Ordering code
GS66516T-TR
GS66516T-MR
Packing method
Tape-and-reel
Mini-reel
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
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