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PDF MT3206A Data sheet ( Hoja de datos )
| Número de pieza | MT3206A | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | MOS-TECH | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MT3206A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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MOS-TECH Semiconductor Co.,LTD
MT3206A
60V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancem ent m ode power field effect
transistors ar e produced using Mos-tech’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially t ailored to
minimize on-st ate resist ance, provide superior swit ching
performance, and wit hstand high energy pulse in t he
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC conver ters, and high ef ficiency swit ching f or power
management in portable and battery operated products.
Features
• 50A, 60V, RDS(on) = 11.2mΩ @VGS = 10 V
• Low gate charge ( typical 43 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
MT3206A
60
50
28
180
± 25
427
45
16
6.0
100
0.8
-55 to +175
300
Typ Max
-- 1.64
0.7 --
-- 65.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2011 MOS-TECH Semiconductor Corporation
Rev. A, October 2011
1 page  
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
©2011 MOS-TECH Semiconductor Corporation
Rev.A, October 2011
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MT3206A.PDF ] | |
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