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What is SM9993DSQG?

This electronic component, produced by the manufacturer "Sinopower", performs the same function as "Dual N-Channel Enhancement Mode MOSFET".


SM9993DSQG Datasheet PDF - Sinopower

Part Number SM9993DSQG
Description Dual N-Channel Enhancement Mode MOSFET
Manufacturers Sinopower 
Logo Sinopower Logo 


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SM9993DSQG
®
Dual N-Channel Enhancement Mode MOSFET
Features
20V/12A,
RDS(ON)= 7.4m(Max.) @ VGS=4.5V
R=
DS(ON)
7.6m
(Max.)
@
V =4V
GS
RDS(ON)= 8m(Max.) @ VGS=3.7V
RDS(ON)= 8.7m(Max.) @ VGS=3.1V
R=
DS(ON)
10m
(Max.)
@
V =2.5V
GS
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
ESD protection
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
One Cell Li-ion Battery Pack.
Pin Description
S2 S2G2
S1 S1G1
DFN2x3-6
DD
(3) (4)
G1 G2
S1 S1
(1) (2)
S2 S2
(5) (6)
N-Channel MOSFET
Ordering and Marking Information
SM9993DS
9993X
SM9993DS QG : XXXXX
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QG : DFN2x3-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
X - Internal Code
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - September, 2014
1
www.sinopowersemi.com

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SM9993DSQG equivalent
SM9993DSQG
Typical Operating Characteristics (Cont.)
®
Output Characteristics
70
60
V =2,2.5,3,4,5,6,7,8,9,10V
GS
50
40 1.7V
30
20 1.5V
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Gate-Source On Resistance
25
I =5.5A
DS
20
15
10
5
0
1 2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
10
9
V =2.5V
GS
8
V =3.1V
GS
7
6 V =4.5V
GS
V =4V
GS
V =3.7V
GS
5
4
0 10 20 30 40 50 60 70
ID- Drain Current (A)
Gate Threshold Voltage
1.4
IDS=250µA
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - September, 2014
5
www.sinopowersemi.com


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SM9993DSQG electronic component.


Information Total 11 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
SM9993DSQGThe function is Dual N-Channel Enhancement Mode MOSFET. SinopowerSinopower

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