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Número de pieza | APM9988QB | |
Descripción | Dual N-Channel Enhancement Mode MOSFET | |
Fabricantes | Sinopower | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APM9988QB (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! APM9988QB
®
Dual N-Channel Enhancement Mode MOSFET
Features
· 20V/8A,
RDS(ON)=17.5mW (Max.) @ VGS=4.5V
RDS(ON)=18.5mW (Max.) @ VGS=4V
RDS(ON)=22mW (Max.) @ VGS=3.1V
RDS(ON)=27.5mW (Max.) @ VGS=2.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S2
S2
G2
S1
S1
G1
Top View of TDFN2x5-6
DD
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(3) (4)
G1 G2
S1 S1
(1) (2)
S2 S2
(5) (6)
N-Channel MOSFET
Ordering and Marking Information
APM9988
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QB : TDFN2x5-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
APM9988 QB :
APM9988
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - March, 2014
1
www.sinopowersemi.com
1 page APM9988QB
Typical Operating Characteristics (Cont.)
®
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01 Single Pulse
1E-3
1E-4 1E-3 0.01
Mounted on 1in2 pad
RqJA : 36 oC/W
0.1 1 10 30
Square Wave Pulse Duration (sec)
30
27
24
21
18
15
12
9
6
3
0
0.0
Output Characteristics
VGS=3,4,5,6,7,8,9,10V
2V
1.5V
0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
24
22
20
VGS=2.5V
18
16 VGS=3.1V
14 VGS=4V
VGS=4.5V
12
10
8
0 5 10 15 20 25 30
ID - Drain Current (A)
Gate-Source On Resistance
32
I =4A
Ds
28
24
20
16
12
8
4
1 2 3 4 5 6 7 8 9 10
VGS - Gate-Source Voltage (V)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - March, 2014
5
www.sinopowersemi.com
5 Page APM9988QB
Taping Direction Information
TDFN2x5-6
USER DIRECTION OF FEED
®
Classification Profile
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - March, 2014
11
www.sinopowersemi.com
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet APM9988QB.PDF ] |
Número de pieza | Descripción | Fabricantes |
APM9988QA | Dual N-Channel Enhancement Mode MOSFET | Sinopower |
APM9988QB | Dual N-Channel Enhancement Mode MOSFET | Sinopower |
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