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What is MBR40H100WTG?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Switch Mode Power Rectifier".


MBR40H100WTG Datasheet PDF - ON Semiconductor

Part Number MBR40H100WTG
Description Switch Mode Power Rectifier
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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MBR40H100WTG
Switch Mode
Power Rectifier
100 V, 40 A
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
100 VOLTS
1
2, 4
3
1
2
3
TO−247
CASE 340AL
MARKING DIAGRAM
B40H100
AYWWG
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 5
B40H100 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MBR40H100WTG TO−247
(Pb−Free)
30 Units/Rail
1 Publication Order Number:
MBR40H100WT/D

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MBR40H100WTG equivalent
MBR40H100WTG
MERCURY
SWITCH
S1
+VDD
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 10. Test Circuit
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 11. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL [
1
2
LI
2
LPK
BVDUT
BVDUTVDD
EQUATION (2):
WAVAL
[
1
2
LI
2
LPK
http://onsemi.com
5


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