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PDF AUIRF4905S Data sheet ( Hoja de datos )

Número de pieza AUIRF4905S
Descripción Power MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! AUIRF4905S Hoja de datos, Descripción, Manual

 
AUTOMOTIVE GRADE
Features
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
AUIRF4905S
AUIRF4905L
VDSS
HEXFET® Power MOSFET
-55V
RDS(on) max.
20m
ID (Silicon Limited)
-70A
ID (Package Limited)
-42A
DD
S
G
D2Pak
AUIRF4905S
S
GD
TO-262
AUIRF4905L
G
Gate
D
Drain
S
Source
Base part number
AUIRF4905L
AUIRF4905S
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF4905L
AUIRF4905S
AUIRF4905STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
-70
-44
-42
-280
170
1.3
± 20
140
790
See Fig.15,16, 12a, 12b
-55 to + 150
300
Units
A
W
W/°C
V
mJ
A
mJ
 
°C 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
0.75
40
Units
°C/W
2015-11-13

1 page




AUIRF4905S pdf
 
80
LIMITED BY PACKAGE
60
40
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Case Temperature
AUIRF4905S/L
2.0
ID = -42A
VGS = -10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
 5
1
D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
R3R3
3 3
CC
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Ri (°C/W)
0.1165
0.3734
0.2608
i (sec)
0.000068
0.002347
0.014811
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2015-11-13

5 Page





AUIRF4905S arduino
  AUIRF4905S/L
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
2015-11-13

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