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Datasheet SIC632 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SIC632Integrated Power Stage

www.vishay.com SiC632, SiC632A Vishay Siliconix 50 A VRPower® Integrated Power Stage DESCRIPTION The SiC632 and SiC632A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay�
Vishay
Vishay
data
2SIC632AIntegrated Power Stage

www.vishay.com SiC632, SiC632A Vishay Siliconix 50 A VRPower® Integrated Power Stage DESCRIPTION The SiC632 and SiC632A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay�
Vishay
Vishay
data


SIC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SIC02A065NSSILICON CARBIDE SCHOTTKY DIODE

SiC02A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International
diode
2SIC02A065TSILICON CARBIDE SCHOTTKY DIODE

SiC02A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mo
Pan Jit International
Pan Jit International
diode
3SIC02A120SSILICON CARBIDE SCHOTTKY DIODE

SiC02A120S SILICON CARBIDE SCHOTTKY DIODE Voltage 1200 V Current 2A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mol
Pan Jit International
Pan Jit International
diode
4SIC04A065NDSILICON CARBIDE SCHOTTKY DIODE

SiC04A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International
diode
5SIC04A065NSSILICON CARBIDE SCHOTTKY DIODE

SiC04A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International
diode
6SIC04A065TSILICON CARBIDE SCHOTTKY DIODE

SiC04A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mo
Pan Jit International
Pan Jit International
diode
7SiC06A065NDSILICON CARBIDE SCHOTTKY DIODE

SiC06A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 6A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International
diode
8SiC06A065NSSILICON CARBIDE SCHOTTKY DIODE

SiC06A065NS SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 6A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: M
Pan Jit International
Pan Jit International
diode
9SiC06A065TSILICON CARBIDE SCHOTTKY DIODE

SiC06A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 6A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Mo
Pan Jit International
Pan Jit International
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
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