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PDF SCT2450KE Data sheet ( Hoja de datos )
| Número de pieza | SCT2450KE | |
| Descripción | N-channel SiC power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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SCT2450KE
N-channel SiC power MOSFET
Data Sheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
450mW
10A
85W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lApplication
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
lOutline
TO-247
lInner circuit
(1) (2) (3)
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Packing code
Marking
Tube
-
-
30
C
SCT2450KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (Tsurge ˂ 300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS-surge*3
PD
Tj
Tstg
Value
1200
10
7
25
-6 to 22
-10 to 26
85
175
-55 to +175
Unit
V
A
A
A
V
V
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2015.11 - Rev.C
1 page  
SCT2450KE
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
90
80
70
60
50
40
30
20
10
0
0
50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
PW = 100s
PW = 1ms
10
PW = 10ms
PW = 100ms
1
Operation in this area
is limited by RDS(on)
0.1
Ta=25ºC
Single Pulse
0.01
0.1 1 10
100
1000 10000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
Single Pulse
1
0.1
0.01
0.0001 0.001 0.01
0.1
1
Pulse Width : PW [s]
10
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/13
2015.11 - Rev.C
5 Page 
SCT2450KE
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
10
VGS=0V
Pulsed
1
0.1 Ta=150ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
012345678
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta=25ºC
di / dt = 110A / s
VR = 400V
VGS = 0V
Pulsed
100
10
1
10
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
11/13
2015.11 - Rev.C
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SCT2450KE.PDF ] | |
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