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What is DMG4800LK3?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "N-CHANNEL ENHANCEMENT MODE MOSFET".


DMG4800LK3 Datasheet PDF - Diodes

Part Number DMG4800LK3
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
DMG4800LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
TO252
Top View
D
D
GS
Top View
Pin-Out
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMG4800LK3-13
Case
TO252
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N4800L
YYWW
= Manufacturer’s Marking
N4800L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
DMG4800LK3
Document number: DS31959 Rev. 3 - 2
1 of 6
www.diodes.com
November 2012
© Diodes Incorporated

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DMG4800LK3 equivalent
DMG4800LK3
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 77°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.01 0.1
1
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
EA
b3 c2
L3
D
H
A2
E1
L4
e
2X b2
3X b
A1
L
a
TO252
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21
e
2.286
E 6.45 6.70 6.58
E1 4.32
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a 0° 10°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Y2
Y1
Z
C
X1 E1
Dimensions
Z
X1
X2
Y1
Y2
C
E1
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
DMG4800LK3
Document number: DS31959 Rev. 3 - 2
5 of 6
www.diodes.com
November 2012
© Diodes Incorporated


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
DMG4800LK3The function is N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes

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