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What is DMN2026UVT?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "N-CHANNEL ENHANCEMENT MODE MOSFET".


DMN2026UVT Datasheet PDF - Diodes

Part Number DMN2026UVT
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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DMN2026UVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(ON) Max
24m@ VGS = 4.5V
32m@ VGS = 2.5V
ID
TA = +25°C
6.2A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin Configuration
D
G
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2026UVT-7
DMN2026UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N5V
N5V = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
DMN2026UVT
Document number: DS37960 Rev. 1 - 2
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
1 of 6
www.diodes.com
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
May 2015
© Diodes Incorporated

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DMN2026UVT equivalent
DMN2026UVT
1
D=0.5
D=0.3
0.1
D=0.1
D=0.05
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.001
0.00001 0.0001
D=0.7
D=0.9
RθJA(t)=r(t) * RθJA
RθJA=105/W
Duty Cycle, D=t1 / t2
0.001
0.01 0.1 1 10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
e1
E1 E
A A2
A1
e
6x b
c
L
4x1
L2
TSOT26
Dim Min Max Typ
A 1.00
A1 0.01 0.10
A2 0.84 0.90
D — — 2.90
E — — 2.80
E1 — — 1.60
b 0.30 0.45
c 0.12 0.20
e — — 0.95
e1 — — 1.90
L 0.30 0.50
L2 — — 0.25
θ 0° 8° 4°
θ1 4° 12°
All Dimensions in mm
DMN2026UVT
Document number: DS37960 Rev. 1 - 2
5 of 6
www.diodes.com
May 2015
© Diodes Incorporated


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Part NumberDescriptionMFRS
DMN2026UVTThe function is N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes

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